Diamond wire for silicon wafering

The use of diamond wire for cutting silicon wafes is much more efficient than traditional cutting method.The following benfits can be achieved when using diamond wire cutting technology and related products.   1.2 times faster than slurry;   2.Faster return on  investment;   3. Increased capacity without increasing capital expenditures;   4.Lower cost/wafer resulting from reduced TCO;   5.Less expensive secondary process costs;   6. Reduced running costs such as electricity and cooling water;   7.No slurry mixing or supply and recovery systems required;   8.Improved TTV;   9.Reduced bow and warp;   10.Holistic approach to cutting;   11.Enhanced RA surface finish reduces secondary processes;   12.Excellent cutting accuracy;   13.No PEG and SiC hazardous waste management;   14.Cleaner and faster process.  Products Specifications: Diameter（mm） Core Wire（mm） Tolerance（±mm） Break Tension（N） Spool Wire Tension at Winding（N） Pitch（mm） 0.12 0.10 0.005 ≥30 10±1 0.5-0.6 0.14 0.12 0.005 ≥40 10±1 0.5-0.6 Applied Case:  Machine Manufacturer Machine Model NTC MWM-442DM Meyer Burger DS264 Wafering throughput comparison: Feature Slurry Diamond Wire Feed Rate: e.g. 0.42 mm/min e.g. 1.0 mm/min Cutting time - 156 x 156 mm 6.8 hours 3.6 hours Cutting time - 125 x 125 mm 5.6 hours 2.6 hours Capacity - 156 x 156 mm 6500 wafers/day 13800 wafers/day Capacity - 125 x 125 mm 7800 wafers/day 16100 wafers/day Heat Induction 40 - 60 °C <20 °C *calculation basis: DS 264; loading length = 800mm; wafer thickness = 0.180mm; (core) wire thickness = 0.120mm  Silicon Wafer Result Cut by DIAT Electroplated Diamond Wire Cutting  Material Wafer Thickness TTV Warp Saw Mark 125×125mm Monocrystailline Ingot 180±20μm ≤30μm ≤50μm ≤15μm 156×156mm  Monocrystalline Ingot 180±20μm ≤30μm ≤50μm ≤15μm

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